By Rudolf Kingslake
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Additional resources for Applied optics and optical engineering,Vol.IV
The upper diagram shows a thin layer of highly strained material on a thick, underlying layer. In the lower diagram the strain is relieved by the formation of localised pyramidal dots, leaving a thin, continuous wetting layer. 16 See Bimberg et al. (1999). 17 See Lester et al. (1999). 1 Practical matters Formation of wells and dots The primary techniques used to produce heterostructures, quantum wells, and self-assembled dots are molecular beam epitaxy (MBE) and metal–organic vapour phase epitaxy (MOVPE), in which the atoms are supplied as a molecular beam and as vapour respectively.
4 shows the variation of the band gaps with composition. 45. 800 eV respectively. Alloys over the full composition range can be used to form waveguides because the index variation is related to the direct gap. 55 µm) The AlGaAs system is an unusual binary alloy in providing a variation of band gap with negligible variation of lattice parameter; however, other systems can be constructed that are useful in building heterostructures even though the lattice parameter of the alloy changes with composition.
This is not literally true, but it is the case that near the band edges the conduction band states have s-like symmetry (spherical) and the valence band states have p-like symmetry (lobes directed along each of the orthogonal axes). These symmetries inﬂuence the dependence of optical transitions on the polarisation of light. III–V compounds are formed from elements of groups III and V in the periodic table. For example, Ga has three outer electrons in the atomic conﬁguration 4s2 4p1 and As has ﬁve outer electrons in the conﬁguration 4s2 4p3 , providing a total of eight electrons per GaAs molecule, an average of four per atom.